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NCEP6080AG NCE N-Channel Super Trench Power MOSFET
Description
The NCEP6080AG uses Super Trench technology that is
uniquely optimized to provide the most efficient high
frequency switching performance. Both conduction and
switching power losses are minimized due to an extremely
low combination of RDS(ON) and Qg. This device is ideal for
high-frequency switching and synchronous rectification.
General Features
VDS =60V,ID =80A
RDS(ON) <4.0m @ vgs=10v (typ:3.5m)
RDS(ON) <4.5m @ vgs=4.5v (typ:4.0m)
Excellent gate charge x RDS(on) product
Very low on-resistance RDS(on)
150 °C operating temperature
Pb-free lead plating
*** UIS tested
Application
DC/DC Converter
Ideal for high-frequency switching and synchronous
rectification
NCEP6080AG采用Super Trench技术,该技术经过***优化,可提供效的高频开关性能。由于R-DS(ON)和Q-g的组合较低,传导和开关功率损耗均降至***。该装置适用于高频开关和同步整流。
一般功能
V-DS=60V,I-D=80A
R-DS(开)<4.0m>R-DS(开)<5.0m>***的门电荷x R-DS(on)产品
R-DS较低导通电阻(导通)
150°C工作温度
无铅电镀
***UIS测试
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